 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SSG4435 -8A, -30V,RDS(ON) 20m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description The SSG4435 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness. The SOP-8 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 3.80 4.00 6.20 5.80 0.25 0.40 0.90 0.19 0.25 45 o 0.375 REF Features * Low on-resistance * Simple drive requirement D 8 D 7 D 6 D 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D * Fast switching Characteristic Date Code 4435SC G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www..com Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 20 -8 -6 -50 2.5 0.02 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient (Max) Symbol Rthj-a Ratings 50 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 SSG4435 Elektronische Bauelemente -8A, -30V,RDS(ON) 20m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 oC) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance 2 2 o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -30 _ Typ. _ Max. _ _ Unit V V/ C V nA uA uA m[ o Test Condition VGS=0V, ID=-250uA Reference to 25 C,ID=-1mA VDS=VGS, ID=-250uA VGS= 20V VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A o -0.037 _ _ _ _ -1.0 _ _ _ _ -3.0 100 -1 -5 20 35 _ _ _ _ _ 47 9.5 8 _ _ _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time www..com Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=-4.6A VDS=-15V VGS=-10V 30 20 120 80 2800 1400 350 _ pF nS VDD=-15V ID=-1A VGS=-10V RG=6 [ RD=15 [ _ _ _ VGS=0V VDS=-15V f=1.0MHz _ 20 S VDS=-10V, ID=-8A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VDS Is ISM Min. _ Typ. -0.75 _ _ Max. -1.2 Unit V Test Condition IS=-2.1A, VGS=0V. VD=VG=0V, VS=-1.2V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) _ _ -2.1 -50 A A Notes: 1.Pulse width limited by safe operating area. 2.Pulse widthO 300us, dutycycleO2%. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 SSG4435 Elektronische Bauelemente -8A, -30V,RDS(ON) 20m[ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics www..com Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature http://www.SeCoSGmbH.com/ Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Type Power Dissipation Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 SSG4435 Elektronische Bauelemente -8A, -30V,RDS(ON) 20m [ P-Channel Enhancement Mode Power Mos.FET Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance www..com Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 12. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 SSG4435 Elektronische Bauelemente -8A, -30V,RDS(ON) 20m [ P-Channel Enhancement Mode Power Mos.FET Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform www..com Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5 |
Price & Availability of SSG4435
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |